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Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Compare
Samsung M393B5170FH0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Overall score
Samsung M393B5170FH0-CK0 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
28
Around 4% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Report a bug
Faster reading speed, GB/s
14.3
11.8
Average value in the tests
Faster write speed, GB/s
11.4
7.3
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
28
Read speed, GB/s
11.8
14.3
Write speed, GB/s
7.3
11.4
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2057
2481
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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