RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Compare
Samsung M393B5270CH0-CH9 4GB vs Crucial Technology CT8G4DFS824A.C8FE 8GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
Crucial Technology CT8G4DFS824A.C8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Reasons to consider
Crucial Technology CT8G4DFS824A.C8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
42
Around -45% lower latency
Faster reading speed, GB/s
15.1
10.6
Average value in the tests
Faster write speed, GB/s
9.7
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
29
Read speed, GB/s
10.6
15.1
Write speed, GB/s
9.0
9.7
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
2589
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB RAM comparisons
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905625-011.A00G 8GB
Kingston KVR533D2N4 512MB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston ACR26D4S9D8ME-16 16GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-4000C18-16GTRS 16GB
AMD AE34G1601U1 4GB
Corsair CMD16GX4M4A2666C15 4GB
Kingston 9905403-038.A00LF 4GB
G Skill Intl F4-3200C14-16GVR 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Asgard VMA44UI-MEC1U2AW2 32GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
AMD R5S38G1601U2S 8GB
Corsair CMK16GX4M2K3600C19 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Report a bug
×
Bug description
Source link