RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BL8G30C15U4W.M8FE 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Crucial Technology BL8G30C15U4W.M8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
18.4
Average value in the tests
Faster write speed, GB/s
2,404.5
14.7
Average value in the tests
Reasons to consider
Crucial Technology BL8G30C15U4W.M8FE 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
104
Around -271% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
28
Read speed, GB/s
3,192.0
18.4
Write speed, GB/s
2,404.5
14.7
Memory bandwidth, mbps
6400
21300
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
786
3443
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Crucial Technology BL8G30C15U4W.M8FE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905471-006.A00LF 4GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F4-3200C16-16GTZ 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905630-005.A00G 8GB
Corsair CM3X2G1600C9DHX 2GB
Micron Technology AFLD48VH1P 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT4G4SFS8213.C8FDD2 4GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
Kingston 9965525-155.A00LF 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Essencore Limited KD48GU481-26N1600 8GB
AMD AE34G2139U2 4GB
G Skill Intl F4-2133C15-16GFXR 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Report a bug
×
Bug description
Source link