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Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
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Faster reading speed, GB/s
3
14.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
104
Around -316% lower latency
Faster write speed, GB/s
7.4
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
25
Read speed, GB/s
3,192.0
14.2
Write speed, GB/s
2,404.5
7.4
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
2104
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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