RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Compare
Samsung M471B1G73DB0-YK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Overall score
Samsung M471B1G73DB0-YK0 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B1G73DB0-YK0 8GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
45
Around -88% lower latency
Faster reading speed, GB/s
16
11.9
Average value in the tests
Faster write speed, GB/s
10.8
8.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
24
Read speed, GB/s
11.9
16.0
Write speed, GB/s
8.1
10.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2077
2731
Samsung M471B1G73DB0-YK0 8GB RAM comparisons
Crucial Technology CT102464BF160B.C16 8GB
Kingston KTP9W1-MID 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3000C15-4GVR 4GB
Kingston 99U5429-007.A00LF 2GB
Crucial Technology BLS16G4D240FSC.16FBR 16GB
Samsung M471B5773DH0-CH9 2GB
Mushkin 99[2/7/4]189F 4GB
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston XRMWRN-MIE2 16GB
Corsair CML8GX3M2A1866C9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C18-32GTRS 32GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston 9905670-012.A00G 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-2933C14-16GFX 16GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-2400C17-4GFT 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK16GX4M4C3200C16 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology ILG8GS2400A 8GB
Report a bug
×
Bug description
Source link