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Samsung M471B5773DH0-CK0 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Compare
Samsung M471B5773DH0-CK0 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Samsung M471B5773DH0-CK0 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5773DH0-CK0 2GB
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Below the latency in the PassMark tests, ns
27
65
Around 58% lower latency
Faster write speed, GB/s
7.8
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
12800
5300
Around 2.42% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
12.2
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471B5773DH0-CK0 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Main characteristics
Memory type
DDR3
DDR2
Latency in PassMark, ns
27
65
Read speed, GB/s
12.2
3,580.8
Write speed, GB/s
7.8
1,592.0
Memory bandwidth, mbps
12800
5300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed
9-9-9-24 / 1600 MHz
5-5-5-15 / 667 MHz
Ranking PassMark (The more the better)
1763
572
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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