RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
66
Around 67% lower latency
Faster reading speed, GB/s
17.7
15.9
Average value in the tests
Faster write speed, GB/s
12.7
7.9
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Report a bug
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
66
Read speed, GB/s
17.7
15.9
Write speed, GB/s
12.7
7.9
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3075
1877
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB RAM comparisons
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5734-014.A00G 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMK128GX4M8A2133C13 16GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C19-16GTRS 16GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3600C19-16GSXF 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-2666C18-4GFX 4GB
SK Hynix HYMP125U64CP8-S6 2GB
Kingston 9965662-019.A00G 32GB
Samsung M471A1G44AB0-CWE 8GB
Corsair CMSX16GX4M2A3200C22 8GB
A-DATA Technology DDR3 1600 4GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMK16GX4M4A2666C16 4GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CM4X8GE2400C14K4 8GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 9965657-011.A00G 16GB
Report a bug
×
Bug description
Source link