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SK Hynix HYMP512U64CP8-Y5 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
SK Hynix HYMP512U64CP8-Y5 1GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
SK Hynix HYMP512U64CP8-Y5 1GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HYMP512U64CP8-Y5 1GB
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Faster reading speed, GB/s
3
16
Average value in the tests
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
63
Around -70% lower latency
Faster write speed, GB/s
12.6
1,583.7
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HYMP512U64CP8-Y5 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
37
Read speed, GB/s
3,895.6
16.0
Write speed, GB/s
1,583.7
12.6
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
639
2808
SK Hynix HYMP512U64CP8-Y5 1GB RAM comparisons
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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