RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Team Group Inc. Vulcan-1600 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Compare
Team Group Inc. Vulcan-1600 4GB vs Micron Technology 4ATF51264AZ-3G2J1 4GB
Overall score
Team Group Inc. Vulcan-1600 4GB
Overall score
Micron Technology 4ATF51264AZ-3G2J1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Team Group Inc. Vulcan-1600 4GB
Report a bug
Reasons to consider
Micron Technology 4ATF51264AZ-3G2J1 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
39
Around -15% lower latency
Faster reading speed, GB/s
17.3
14.3
Average value in the tests
Faster write speed, GB/s
12.0
8.7
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Team Group Inc. Vulcan-1600 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
34
Read speed, GB/s
14.3
17.3
Write speed, GB/s
8.7
12.0
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2376
2665
Team Group Inc. Vulcan-1600 4GB RAM comparisons
PNY Electronics 4GBH1X04F1AA28-15 4GB
Kingston KYXC0V-MIB 16GB
Micron Technology 4ATF51264AZ-3G2J1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73BH0-YK0 8GB
Mushkin 99[2/7/4]190F 4GB
Team Group Inc. Vulcan-1600 4GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CM4X8GC3000C15K4 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Samsung M393B5170FH0-CK0 4GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX2400C12D4/8GX 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Kingston 9905471-002.A00LF 2GB
Transcend Information TS2GSH64V1B 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905599-029.A00G 4GB
SK Hynix HMP125U6EFR8C-S6 2GB
G Skill Intl F4-3600C14-16GTRG 16GB
Samsung M393B5170FH0-CK0 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Kingston 99U5584-017.A00LF 4GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
Report a bug
×
Bug description
Source link