RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Compare
TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB
Overall score
TwinMOS 8DPT5MK8-TATP 2GB
Overall score
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB
Report a bug
Faster reading speed, GB/s
3
16.1
Average value in the tests
Reasons to consider
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Report a bug
Below the latency in the PassMark tests, ns
39
53
Around -36% lower latency
Faster write speed, GB/s
11.9
1,590.1
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
53
39
Read speed, GB/s
3,726.4
16.1
Write speed, GB/s
1,590.1
11.9
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
522
2782
TwinMOS 8DPT5MK8-TATP 2GB RAM comparisons
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965525-144.A00LF 8GB
G Skill Intl F4-2666C15-8GVS 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-4600C18-8GTRS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX3466C19D4/16G 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Kingston 99U5474-022.A00LF 2GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905702-135.A00G 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMA41GR7MFR4N-TF 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A4G43AB2-CVF 32GB
Crucial Technology CT102464BD160B.M16 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Crucial Technology CT8G4SFRA32A.M4FE 8GB
Samsung M393B2G70BH0-YK0 16GB
Panram International Corporation D4N2666PS-16G 16GB
Kingston K1N7HK-ELC 2GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Report a bug
×
Bug description
Source link