RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Faster reading speed, GB/s
2
15.6
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
96
Around -300% lower latency
Faster write speed, GB/s
12.1
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
24
Read speed, GB/s
2,725.2
15.6
Write speed, GB/s
1,336.0
12.1
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
438
2852
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9905711-038.A00G 8GB
Kingston 9905471-002.A00LF 2GB
Kingston 9965669-017.A00G 16GB
Qimonda 72T128420EFA3SB2 1GB
Kingston 99U5734-014.A00G 16GB
Samsung M393B1G70BH0-YK0 8GB
Kingston KF2666C15S4/16G 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KHX3200C18D4/16G 16GB
Samsung M393B1K70CH0-YH9 8GB
Corsair CMT64GX4M8C3200C16 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Avant Technology J642GU42J9266N2 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hewlett-Packard 7EH99AA# 16GB
Team Group Inc. Team-Elite-1333 4GB
Corsair CMD16GX4M4B2133C10 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMA82GS6CJR8N-UH 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
A-DATA Technology DDR4 3200 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3866C18-4GVK 4GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMU32GX4M4C3000C15 8GB
Report a bug
×
Bug description
Source link