RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Compare
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Overall score
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
71
Around 65% lower latency
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Report a bug
Faster reading speed, GB/s
15.5
12.6
Average value in the tests
Faster write speed, GB/s
8.3
7.2
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
71
Read speed, GB/s
12.6
15.5
Write speed, GB/s
7.2
8.3
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2051
1902
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM comparisons
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HMA82GR7JJR8N-VK 16GB
Kingston 9965516-430.A00G 16GB
Corsair CMU16GX4M2C3200C16 8GB
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Samsung M378B5673FH0-CH9 2GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
Kingston 9905403-447.A00LF 4GB
Corsair CMK32GX4M2Z3200C16 16GB
Samsung M378B5273DH0-CH9 4GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Samsung M386B4G70DM0-CMA4 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C14-32GTRG 32GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston KCRXJ6-HYJ 16GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Report a bug
×
Bug description
Source link