RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Select RAM 1
Select RAM 2
Compare
DDR2 RAM list
All memory modules, sorted by increasing latency
№
Bandwidth
Latency, ns
Read speed, GB/s
Write speed, GB/s
№
2281
RAM
SK Hynix HYMP125F72CP8D3-S5 2GB
Latency
85
Read speed
2,648.9
Write speed
2,174.6
№
2282
RAM
Elpida EBE11FD8AJFT-6E-E 1GB
Latency
85
Read speed
2,894.7
Write speed
2,059.3
№
2283
RAM
Unigen Corporation UG25T6400M8SU-8CP 2GB
Latency
85
Read speed
2,537.2
Write speed
1,824.9
№
2284
RAM
Carry Technology Co. Ltd. S2A2G73-8005PN1D00 2GB
Latency
85
Read speed
1,837.5
Write speed
1,145.2
№
2285
RAM
Exel CM72FB2048-667 2GB
Latency
86
Read speed
3,002.7
Write speed
2,343.3
№
2286
RAM
Corsair VS1GSDS533D2 1GB
Latency
86
Read speed
1,761.9
Write speed
895.9
№
2287
RAM
Micron Technology 9HTF25672AZ-667C1 2GB
Latency
86
Read speed
4,291.4
Write speed
2,685.4
№
2288
RAM
Swissbit MEU12864D4BC1EP-30 1GB
Latency
86
Read speed
2,893.0
Write speed
1,754.2
№
2289
RAM
Micron Technology 16HTF25664AY-40EA1 2GB
Latency
86
Read speed
2,467.9
Write speed
1,657.0
№
2290
RAM
Samsung M4 70T2953EZ3-CD5 1GB
Latency
86
Read speed
1,873.2
Write speed
832.5
№
2291
RAM
takeMS International AG TMS2GS264D081805AV 2GB
Latency
86
Read speed
2,444.5
Write speed
891.6
№
2292
RAM
Samsung M395T5160QZ4-CE65 2GB
Latency
86
Read speed
2,571.9
Write speed
1,985.4
№
2293
RAM
Micron Technology 36HTF25672F667D1D3 2GB
Latency
86
Read speed
3,040.1
Write speed
1,993.0
№
2294
RAM
Samsung M395T5750GZ4-CE66 2GB
Latency
86
Read speed
2,967.8
Write speed
2,109.3
№
2295
RAM
Transcend Information TS128MSQ64V5U 1GB
Latency
86
Read speed
1,242.7
Write speed
406.0
№
2296
RAM
Samsung DT3B122GX4GBV-800I 4GB
Latency
86
Read speed
4,311.5
Write speed
2,562.4
№
2297
RAM
ASint Technology B19J5LB4DNH 2GB
Latency
86
Read speed
4,001.1
Write speed
2,847.0
№
2298
RAM
Super Talent MA T667SB2G01-STT 2GB
Latency
87
Read speed
2,245.2
Write speed
1,032.9
№
2299
RAM
COS Memory AG extreMEmory 512MB
Latency
87
Read speed
2,266.2
Write speed
1,327.5
№
2300
RAM
Golden Empire CL4-4-4DDR2533 5 1GB
Latency
87
Read speed
1,722.8
Write speed
1,152.8
«
112
113
114
115
116
117
»
Latest comparisons
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Mushkin MR[A/B]4U266GHHF8G 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
PNY Electronics PNY 2GB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
Kingston 9965525-155.A00LF 8GB
SK Hynix HMA82GS6DJR8N-WM 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 9965596-035.B00G 4GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M471A5143EB1-CRC 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Mushkin 99[2/7/4]209F 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology AFLD44EK2P 4GB
Corsair CMX8GX3M2A1600C11 4GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
Apacer Technology 78.01G86.9H50C 1GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Report a bug
×
Bug description
Source link
Русский 
Español 
Português 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
![Mushkin MR[A/B]4U266GHHF8G 8GB](https://ram-comparison.b-cdn.net/images/ram_2.png)