RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Compara
DDR2 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
401
RAM
ASint Technology WLY2128M8-JGG3B 1GB
Latency
49
Read speed
4,295.9
Write speed
2,053.5
№
402
RAM
SK Hynix HYMP512U72CP8-Y5 1GB
Latency
49
Read speed
4,881.4
Write speed
2,103.5
№
403
RAM
Mushkin 996599r 2GB
Latency
49
Read speed
5,873.8
Write speed
3,147.4
№
404
RAM
Mushkin 996633 2GB
Latency
49
Read speed
4,983.3
Write speed
2,218.2
№
405
RAM
A Force Manufacturing Ltd. 512X64Y-80F 4GB
Latency
49
Read speed
4,741.3
Write speed
1,727.3
№
406
RAM
Samsung M3 78T3354CZ3-CD5 256MB
Latency
49
Read speed
3,158.3
Write speed
1,740.4
№
407
RAM
Centon Electronics JIYS38UXB 1GB 1GB
Latency
49
Read speed
3,668.6
Write speed
1,936.9
№
408
RAM
Patriot Memory (PDP Systems) PEP21G8500EL 1GB
Latency
49
Read speed
5,586.0
Write speed
2,434.2
№
409
RAM
A-DATA Technology DDR2 800G 2GB
Latency
49
Read speed
5,135.8
Write speed
2,343.1
№
410
RAM
Nanya Technology M2Y1G64TU8HB5B-3C 1GB
Latency
50
Read speed
4,117.7
Write speed
1,664.1
№
411
RAM
Samsung M3 78T6553BZ0-KCC 512MB
Latency
50
Read speed
3,015.1
Write speed
1,356.9
№
412
RAM
Nanya Technology M2Y1G64TU88D5B-3C 1GB
Latency
50
Read speed
2,937.7
Write speed
1,752.9
№
413
RAM
A-DATA Technology DQPE1B16 2GB
Latency
50
Read speed
4,679.7
Write speed
1,844.7
№
414
RAM
A-DATA Technology EBE11UD8AJWA-8G-E 1GB
Latency
50
Read speed
5,587.8
Write speed
2,382.9
№
415
RAM
Nanya Technology M2Y2G64TU8HC6B-AC 2GB
Latency
50
Read speed
4,747.4
Write speed
2,102.0
№
416
RAM
Kingston 9905316-084.A00LF 1GB
Latency
50
Read speed
4,498.5
Write speed
2,075.0
№
417
RAM
Smart Modular SH564568FG8N6KFSER 2GB
Latency
50
Read speed
5,101.3
Write speed
2,347.2
№
418
RAM
Nanya Technology M2Y2G64TU8HD5B-3C 2GB
Latency
50
Read speed
4,191.7
Write speed
1,229.8
№
419
RAM
Samsung M3 91T5663DZ3-CF7 2GB
Latency
50
Read speed
5,088.3
Write speed
2,353.4
№
420
RAM
Infineon (Siemens) 72T128020HU3SA 1GB
Latency
50
Read speed
4,052.4
Write speed
1,803.6
«
18
19
20
21
22
23
»
Últimas comparaciones
Kingston KN2M64-ETB 8GB
V-Color Technology Inc. TL48G32S8RRGB16 8GB
Samsung M378A1K43EB2-CWE 8GB
SK Hynix HMA82GU7AFR8N-UH 16GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Samsung M471A1G44AB0-CWE 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3000C15-8GTZ 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kllisre 0000 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Kingston CBD24D4S7D8MA-16 16GB
Kingston KHX1600C9D3/8G 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Samsung M471B5273CH0-CH9 4GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Kingston KF2933C17S4/16G 16GB
SK Hynix HMA84GR7JJR4N-VK 32GB
Kingston HP698651-154-MCN 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Corsair CM4X16GE2666C18S4 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
SK Hynix HMA82GR8AMR4N-TF 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston LV36D4U1S8HD-8XR 8GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KF2666C16D4/8G 8GB
Informar de un error
×
Bug description
Source link
Русский 
English 
Português 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
