RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Compara
DDR2 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
1181
RAM
Transcend Information JM800QLJ-1G 1GB
Latency
58
Read speed
3,996.0
Write speed
2,007.5
№
1182
RAM
Transcend Information JM800QSU-1G 1GB
Latency
58
Read speed
3,588.6
Write speed
1,527.0
№
1183
RAM
SK Hynix HMP351S6AFR8C-S6 4GB
Latency
58
Read speed
4,773.8
Write speed
1,938.9
№
1184
RAM
Kingston 99U5295-021.A00LF 2GB
Latency
58
Read speed
3,982.8
Write speed
1,713.9
№
1185
RAM
DATARAM DATARAM 65510 4GB
Latency
58
Read speed
3,368.4
Write speed
2,056.6
№
1186
RAM
SK Hynix HYMP125U64AP8-Y5 2GB
Latency
58
Read speed
3,440.9
Write speed
1,491.6
№
1187
RAM
Apacer Technology 78.AAGA0.BS4 2GB
Latency
58
Read speed
4,961.2
Write speed
2,799.2
№
1188
RAM
Mushkin 991558 (996558) 2GB
Latency
58
Read speed
4,365.4
Write speed
2,286.4
№
1189
RAM
Kreton Corporation 51623510G681451465 2GB
Latency
58
Read speed
3,133.4
Write speed
2,165.2
№
1190
RAM
Kreton Corporation 515230120581350000 1GB
Latency
58
Read speed
3,492.8
Write speed
1,302.3
№
1191
RAM
Kingston 99U5316-028.A00LF 1GB
Latency
58
Read speed
4,120.0
Write speed
1,881.5
№
1192
RAM
Samsung 511-1152-01 Rev 01 4GB
Latency
58
Read speed
3,402.0
Write speed
2,538.0
№
1193
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512U64P8-C4 1GB
Latency
58
Read speed
3,234.1
Write speed
1,822.7
№
1194
RAM
OCZ OCZ2V6672G 2GB
Latency
58
Read speed
4,176.3
Write speed
1,876.8
№
1195
RAM
Kingston 99U5431-004.A00LF 1GB
Latency
58
Read speed
4,276.1
Write speed
2,130.0
№
1196
RAM
Elpida EBE21FE8ACFE-6E-E 2GB
Latency
58
Read speed
3,403.7
Write speed
2,067.2
№
1197
RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Latency
58
Read speed
4,796.5
Write speed
2,001.3
№
1198
RAM
Samsung M3 78T2953EZ3-CF7 1GB
Latency
58
Read speed
4,241.0
Write speed
1,950.7
№
1199
RAM
Patriot Memory (PDP Systems) 8500EL Series 2GB
Latency
58
Read speed
4,639.6
Write speed
2,251.1
№
1200
RAM
A Force Manufacturing Ltd. 256X64M-80F 2GB
Latency
58
Read speed
4,276.0
Write speed
2,002.0
«
57
58
59
60
61
62
»
Últimas comparaciones
Kingston 99U5403-036.A00G 4GB
Mushkin 99[2/7/4]205F 8GB
Samsung M393B1G70QH0-YK0 8GB
Avant Technology J644GU44J2320NF 32GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3000C14-16GVRD 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung V-GeN D4S8GL24A8 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston KHX4000C19D4/8GX 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CMWX8GD3200C16W4 8GB
Samsung M471A5244CB0-CWE 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Kingston 9905469-153.A00LF 4GB
Corsair CMSX4GX4M1A2400C16 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Kingston 9905403-090.A01LF 4GB
AMD R748G2400U2S 8GB
Kingston 9905403-515.A00LF 8GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
Kingston 9965662-016.A00G 16GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Samsung M393B1G70QH0-YK0 8GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Informar de un error
×
Bug description
Source link
Русский 
English 
Português 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
![Mushkin 99[2/7/4]205F 8GB](https://ram-comparison.b-cdn.net/images/ram_2.png)