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Compara
DDR2 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
1221
RAM
Micron Technology 16HTF12864HY-53EB3 1GB
Latency
59
Read speed
3,217.8
Write speed
1,305.0
№
1222
RAM
Kingmax Semiconductor KLBD48F-A8KB4 1GB
Latency
59
Read speed
2,916.0
Write speed
1,166.0
№
1223
RAM
Crucial Technology BL25664AA80A.16FH5 2GB
Latency
59
Read speed
4,785.8
Write speed
2,865.0
№
1224
RAM
AENEON AET760SD00-30DB97X 1GB
Latency
59
Read speed
3,528.6
Write speed
1,409.4
№
1225
RAM
ProMos/Mosel Vitelic V916765K24QAFW-E4 1GB
Latency
59
Read speed
3,368.5
Write speed
1,595.4
№
1226
RAM
Micron Technology 16HTF25664AY-80EG1 2GB
Latency
59
Read speed
1,377.8
Write speed
1,407.8
№
1227
RAM
Kingston 9965342-005.A02LF 2GB
Latency
59
Read speed
3,135.2
Write speed
2,273.9
№
1228
RAM
Samsung M4 70T3354CZ3-CD5 256MB
Latency
59
Read speed
2,554.0
Write speed
1,209.8
№
1229
RAM
AENEON AET760UD00-30DC07X 1GB
Latency
59
Read speed
3,976.4
Write speed
1,718.1
№
1230
RAM
Crucial Technology CT12864AA667.M8VFE 1GB
Latency
59
Read speed
3,857.8
Write speed
1,686.4
№
1231
RAM
Qimonda 64T64020HDL3.7A 512MB
Latency
59
Read speed
3,710.2
Write speed
1,522.0
№
1232
RAM
Kingmax Semiconductor KLDD48F-A8KI5 1GB
Latency
59
Read speed
4,091.8
Write speed
2,381.0
№
1233
RAM
AENEON AET860UD00-30DB08X 2GB
Latency
59
Read speed
4,076.5
Write speed
1,909.8
№
1234
RAM
Qimonda 64T128020EU3SC 1GB
Latency
59
Read speed
3,541.9
Write speed
1,622.5
№
1235
RAM
Kingmax Semiconductor KLDD48F-B8KY6 1GB
Latency
59
Read speed
3,960.6
Write speed
1,798.2
№
1236
RAM
Qimonda 64T128020HU3SA 1GB
Latency
59
Read speed
3,244.5
Write speed
1,756.9
№
1237
RAM
Hynix Semiconductor (Hyundai Electronics) 99P5316-014.A00LF 2GB
Latency
59
Read speed
4,940.8
Write speed
2,325.7
№
1238
RAM
Qimonda 64T256020EDL3SC2 2GB
Latency
59
Read speed
3,542.3
Write speed
1,542.3
№
1239
RAM
Qimonda 64T256020EU2.5C2 2GB
Latency
59
Read speed
4,468.8
Write speed
2,013.8
№
1240
RAM
Qimonda 64T256020EU3SC2 2GB
Latency
59
Read speed
4,652.0
Write speed
2,246.7
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Últimas comparaciones
A-DATA Technology DQVE1908 512MB
Corsair CM4X4GF2133C13K4 4GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3600C16-8GTRS 8GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-4000C18-8GTZRB 8GB
Samsung M471B5273CH0-CH9 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
AMD R5S38G1601U2S 8GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
Qimonda 64T128020EDL2.5C2 1GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C15-8GTZ 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation W4U2666PS-8GC19 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9905598-006.A00G 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMK16GX4M2C3600C20 8GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Samsung M4 70T5267AZ3-CF7 4GB
Kingston ACR256X64D2S800C6 2GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston MSI24D4U7S8MB-8 8GB
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