RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Compara
DDR2 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
1841
RAM
Samsung M4 70T5663QZ3-CE6 2GB
Latency
68
Read speed
3,886.6
Write speed
1,702.6
№
1842
RAM
Crucial Technology CT12864AA800.M8FJ1 1GB
Latency
68
Read speed
3,445.0
Write speed
1,899.7
№
1843
RAM
Kingston HP800D2N5/2G-H 2GB
Latency
68
Read speed
3,967.3
Write speed
1,693.4
№
1844
RAM
takeMS International AG TMS1GB264D082805AQ 1GB
Latency
68
Read speed
3,710.2
Write speed
2,556.6
№
1845
RAM
Samsung M4 70T6554BZ0-CD5 512MB
Latency
68
Read speed
1,604.0
Write speed
674.7
№
1846
RAM
Qimonda 64T128021EDL3SB2 1GB
Latency
68
Read speed
2,920.8
Write speed
1,409.7
№
1847
RAM
Crucial Technology CT25664AC667.M16FJ 2GB
Latency
68
Read speed
2,786.8
Write speed
1,334.9
№
1848
RAM
takeMS – Ultron AG TMS1GB264C081-805U 1GB
Latency
68
Read speed
5,046.0
Write speed
4,001.3
№
1849
RAM
Crucial Technology CT25664AC800.K16F 2GB
Latency
68
Read speed
3,237.8
Write speed
1,542.6
№
1850
RAM
Crucial Technology CT25664AC800.M16FM 2GB
Latency
68
Read speed
3,573.0
Write speed
1,682.5
№
1851
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112S64MP8-C4 1GB
Latency
68
Read speed
1,650.6
Write speed
622.4
№
1852
RAM
Apacer Technology 78.02G72.9K2 1GB
Latency
68
Read speed
2,439.3
Write speed
1,318.4
№
1853
RAM
Micron Technology 36HTF25672F667F1N6 2GB
Latency
68
Read speed
2,844.2
Write speed
2,103.6
№
1854
RAM
Kingston 99P5429-008.A03LF 2GB
Latency
68
Read speed
4,291.4
Write speed
2,139.0
№
1855
RAM
SK Hynix HMP125S6EFR8C-S6 2GB
Latency
68
Read speed
4,591.0
Write speed
2,117.0
№
1856
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP151F72CP8D5-Y5 2GB
Latency
68
Read speed
2,784.7
Write speed
2,024.4
№
1857
RAM
Kingston 99U5295-012.A00LF 1GB
Latency
68
Read speed
2,401.6
Write speed
1,109.4
№
1858
RAM
Apacer Technology 78.A2G86.9K5 2GB
Latency
68
Read speed
3,183.3
Write speed
1,597.5
№
1859
RAM
SK Hynix HYMP125S64CP8-S6 2GB
Latency
68
Read speed
4,402.8
Write speed
2,013.5
№
1860
RAM
Transcend Information TS256MSQ64V6U 2GB
Latency
68
Read speed
3,806.0
Write speed
1,655.5
«
90
91
92
93
94
95
»
Últimas comparaciones
Samsung M393B2G70BH0-CK0 16GB
Corsair CMSX8GX4M2A2400C16 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3000C16-16GSXKB 16GB
Kingston 9965525-144.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Crucial Technology CT25664BA1339.M8FK 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 78.CAGMR.40C0B 8GB
Samsung M378A1G43DB0-CPB 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Samsung M378T5663QZ3-CF7 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Kingston 9905471-071.A00LF 8GB
Corsair CMU16GX4M2C3200C16 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2133C15-4GRK 4GB
Informar de un error
×
Bug description
Source link
Русский 
English 
Português 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
