Samsung M4 70T5663QZ3-CF7 2GB vs Kingmax Semiconductor KLDE88F-B8HS5 2GB

Note globale

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Note globale

Kingmax Semiconductor KLDE88F-B8HS5 2GB

Kingmax Semiconductor KLDE88F-B8HS5 2GB

Différences Spécifications Commentaires

Différences

Samsung M4 70T5663QZ3-CF7 2GB

Raisons de considérer
Samsung M4 70T5663QZ3-CF7 2GB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

4 4

Valeur moyenne dans les tests

Kingmax Semiconductor KLDE88F-B8HS5 2GB

Raisons de considérer
Kingmax Semiconductor KLDE88F-B8HS5 2GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

54 64

Autour de -19% latence réduite
Vitesse d'écriture plus rapide, GB/s

2,275.0 1,869.1

Valeur moyenne dans les tests

Spécifications

Liste complète des spécifications techniques

Samsung M4 70T5663QZ3-CF7 2GB

Kingmax Semiconductor KLDE88F-B8HS5 2GB

Principales caractéristiques

Type de mémoire

DDR2 DDR2
Latence dans PassMark, ns

64 54
Vitesse de lecture, GB/s

4,477.7 4,390.6
Vitesse d'écriture, GB/s

1,869.1 2,275.0
Largeur de bande de la mémoire, mbps

6400 6400

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Vitesse d'horloge

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
Classement PassMark (Plus il y en a, mieux c'est)

697 669

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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