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Kingston K531R8-MIN 4GB
Mushkin 99[2/7/4]198F 8GB

Kingston K531R8-MIN 4GB vs Mushkin 99[2/7/4]198F 8GB

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Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

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Mushkin 99[2/7/4]198F 8GB

Mushkin 99[2/7/4]198F 8GB

Differenze Specifiche tecniche Commenti

Differenze

Kingston K531R8-MIN 4GB Motivi da considerare
Kingston K531R8-MIN 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.4 left arrow 12.6
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    9.0 left arrow 8.7
    Valore medio nei test
Mushkin 99[2/7/4]198F 8GB Motivi da considerare
Mushkin 99[2/7/4]198F 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    26 left arrow 28
    Intorno -8% latenza inferiore
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 12800
    Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Kingston K531R8-MIN 4GB
Mushkin 99[2/7/4]198F 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    28 left arrow 26
  • Velocità di lettura, GB/s
    13.4 left arrow 12.6
  • Velocità di scrittura, GB/s
    9.0 left arrow 8.7
  • Larghezza di banda della memoria, mbps
    12800 left arrow 17000
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2445 left arrow 2257

Kingston K531R8-MIN 4GB Confronto tra le RAM

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Mushkin 99[2/7/4]198F 8GB Confronto tra le RAM

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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