Kreton Corporation 51624xxxx68x35xxxx 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Punteggio complessivo

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Punteggio complessivo

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Differenze Specifiche tecniche Commenti

Differenze

Kreton Corporation 51624xxxx68x35xxxx 2GB

Motivi da considerare
Kreton Corporation 51624xxxx68x35xxxx 2GB

Velocità di lettura più elevata, GB/s

4 19.5

Valore medio nei test

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Motivi da considerare
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Al di sotto della latenza nei test PassMark, ns

19 59

Intorno -211% latenza inferiore
Velocità di scrittura più elevata, GB/s

15.8 1,855.7

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

19200 5300

Intorno 3.62 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Kreton Corporation 51624xxxx68x35xxxx 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

59 19
Velocità di lettura, GB/s

4,168.0 19.5
Velocità di scrittura, GB/s

1,855.7 15.8
Larghezza di banda della memoria, mbps

5300 19200

Other

Descrizione

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

680 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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