Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M471A1A43DB0-CPB 8GB

Punteggio complessivo

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Punteggio complessivo

Samsung M471A1A43DB0-CPB 8GB

Samsung M471A1A43DB0-CPB 8GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 16JTF51264HZ-1G6M1 4GB

Motivi da considerare
Micron Technology 16JTF51264HZ-1G6M1 4GB

Velocità di lettura più elevata, GB/s

12.9 12.3

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.0 6.4

Valore medio nei test

Samsung M471A1A43DB0-CPB 8GB

Motivi da considerare
Samsung M471A1A43DB0-CPB 8GB

Al di sotto della latenza nei test PassMark, ns

27 28

Intorno -4% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 12800

Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Micron Technology 16JTF51264HZ-1G6M1 4GB

Samsung M471A1A43DB0-CPB 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

28 27
Velocità di lettura, GB/s

12.9 12.3
Velocità di scrittura, GB/s

9.0 6.4
Larghezza di banda della memoria, mbps

12800 17000

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2112 1732

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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