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Samsung M393B1G70BH0-CK0 8GB
Micron Technology 9ASF51272PZ-2G1B1 4GB

Samsung M393B1G70BH0-CK0 8GB vs Micron Technology 9ASF51272PZ-2G1B1 4GB

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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Punteggio complessivo
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Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B1G70BH0-CK0 8GB Motivi da considerare
Samsung M393B1G70BH0-CK0 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    9.8 left arrow 9.6
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.1 left arrow 7.8
    Valore medio nei test
Micron Technology 9ASF51272PZ-2G1B1 4GB Motivi da considerare
Micron Technology 9ASF51272PZ-2G1B1 4GB
Segnala un bug
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 12800
    Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    51 left arrow 51
  • Velocità di lettura, GB/s
    9.8 left arrow 9.6
  • Velocità di scrittura, GB/s
    8.1 left arrow 7.8
  • Larghezza di banda della memoria, mbps
    12800 left arrow 17000
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2208 left arrow 2248

Samsung M393B1G70BH0-CK0 8GB Confronto tra le RAM

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

Micron Technology 9ASF51272PZ-2G1B1 4GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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