Samsung M471B5173EB0-YK0 4GB vs SK Hynix HMT351S6CFR8A-PB 4GB

Punteggio complessivo

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Punteggio complessivo

SK Hynix HMT351S6CFR8A-PB 4GB

SK Hynix HMT351S6CFR8A-PB 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5173EB0-YK0 4GB

Motivi da considerare
Samsung M471B5173EB0-YK0 4GB

Velocità di lettura più elevata, GB/s

13 12.3

Valore medio nei test

SK Hynix HMT351S6CFR8A-PB 4GB

Motivi da considerare
SK Hynix HMT351S6CFR8A-PB 4GB

Al di sotto della latenza nei test PassMark, ns

39 44

Intorno -13% latenza inferiore
Velocità di scrittura più elevata, GB/s

8.4 8.2

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471B5173EB0-YK0 4GB

SK Hynix HMT351S6CFR8A-PB 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

44 39
Velocità di lettura, GB/s

13.0 12.3
Velocità di scrittura, GB/s

8.2 8.4
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

2069 2019

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Ultimi confronti

Kingston 99U5469-041.A00LF 4GB

Kingston 99U5469-041.A00LF 4GB

Kingston 99P5723-006.A00G 8GB

Kingston 99P5723-006.A00G 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Apacer Technology 78.BAGNF.40C0B 4GB

Apacer Technology 78.BAGNF.40C0B 4GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

Crucial Technology CT16G4SFD8266.16FE1 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMA82GS6AFR8N-UH 16GB

SK Hynix HMA82GS6AFR8N-UH 16GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-3000C15-4GTZ 4GB

G Skill Intl F4-3000C15-4GTZ 4GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9905701-098.A00G 16GB

Kingston 9905701-098.A00G 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Corsair CM4X8GE2400C16K4 8GB

Corsair CM4X8GE2400C16K4 8GB