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Confronto
DDR2 Elenco RAM
Tutti i moduli di memoria, ordinati in base alla latenza crescente
№
Larghezza di banda
Latenza, ns
Velocità di lettura, GB/s
Velocità di scrittura, GB/s
№
1161
RAM
Crucial Technology CT12864AA800.M8FH 1GB
Latency
58
Read speed
4,441.0
Write speed
2,112.7
№
1162
RAM
Nanya Technology NT2GT72U8PB0JY-3C 2GB
Latency
58
Read speed
4,500.7
Write speed
2,258.9
№
1163
RAM
Qimonda 64T128020HU3SB 1GB
Latency
58
Read speed
3,690.8
Write speed
1,795.7
№
1164
RAM
Micron Technology 18HF12872FD667B5D3 1GB
Latency
58
Read speed
3,418.4
Write speed
2,068.5
№
1165
RAM
Apacer Technology 75.A73AA.G05 2GB
Latency
58
Read speed
5,144.5
Write speed
3,153.7
№
1166
RAM
Samsung M395T2953CZ4-CE60 1GB
Latency
58
Read speed
2,418.8
Write speed
1,691.2
№
1167
RAM
Apacer Technology 75.A73AA.G06 2GB
Latency
58
Read speed
4,387.2
Write speed
2,392.5
№
1168
RAM
Crucial Technology CT25664AA800.K16F 2GB
Latency
58
Read speed
4,468.9
Write speed
2,268.9
№
1169
RAM
Micron Technology 18HTF12872AY-800F1 1GB
Latency
58
Read speed
4,025.3
Write speed
2,107.0
№
1170
RAM
Qimonda 72T128000HR5A 1GB
Latency
58
Read speed
2,770.6
Write speed
1,336.8
№
1171
RAM
Micron Technology 18HTF25672AY-667E1 2GB
Latency
58
Read speed
4,410.5
Write speed
2,325.5
№
1172
RAM
Qimonda 72T128020EU2.5B2 1GB
Latency
58
Read speed
4,228.1
Write speed
2,009.8
№
1173
RAM
Apacer Technology 78.01GA0.9L5?????? 1GB
Latency
58
Read speed
3,758.0
Write speed
2,089.1
№
1174
RAM
Kingston KWM551-ELG 512MB
Latency
58
Read speed
3,807.8
Write speed
1,717.3
№
1175
RAM
Crucial Technology CT51264AA667.M16FC 4GB
Latency
58
Read speed
4,463.9
Write speed
1,949.3
№
1176
RAM
Kingston KWM553-ELF 2GB
Latency
58
Read speed
4,541.9
Write speed
2,145.5
№
1177
RAM
Micron Technology 36HTF25672F667D1E4 2GB
Latency
58
Read speed
3,417.9
Write speed
2,292.0
№
1178
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112U
Latency
58
Read speed
4,295.7
Write speed
1,992.4
№
1179
RAM
Crucial Technology RM12864AA800.8FE 1GB
Latency
58
Read speed
3,890.6
Write speed
2,070.7
№
1180
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125U
Latency
58
Read speed
4,157.4
Write speed
1,935.1
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Ultimi confronti
Corsair CMY16GX3M4A2133C8 4GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
A-DATA Technology DQVE1908 512MB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
Crucial Technology CT102464BA160B.M16 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
AMD AE34G2139U2 4GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 9965662-008.A01G 16GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CM4X32GC3200C16K2E 32GB
Kingston 99U5469-045.A00LF 4GB
Apacer Technology GD2.1831WS.002 16GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KF2933C17S4/32G 32GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
Kingston 99U5584-007.A00LF 4GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston CBD24D4S7D8MA-16 16GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C16-16GTZN 16GB
Corsair CMK16GX4M2B3200C16 8GB
Kingston KF2666C16D4/16G 16GB
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