Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Crucial Technology BLS8G4D240FSA.M16FAD 8GB

総合得点

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

総合得点

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

相違点仕様コメント

相違点

Nanya Technology NT4GC72B4NA1NL-CG 4GB

考慮すべき理由
Nanya Technology NT4GC72B4NA1NL-CG 4GB

バグを報告する

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

考慮すべき理由
Crucial Technology BLS8G4D240FSA.M16FAD 8GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

38 42

周辺 -11% 低遅延
読み出し速度の高速化、GB/s

14.7 10.6

テスト平均値
書き込み速度の高速化、GB/s

11.4 7.8

テスト平均値
より高いメモリ帯域幅、mbps

19200 10600

周辺 1.81 高帯域

仕様

技術仕様の完全リスト

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

42 38
読み出し速度、GB/s

10.6 14.7
書き込み速度、GB/秒

7.8 11.4
メモリ帯域幅、mbps

10600 19200

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
タイミング / クロック速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

2150 2919

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-3200C14-8GVR 8GB

G Skill Intl F4-3200C14-8GVR 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Corsair CMU32GX4M4D3000C16 8GB

Corsair CMU32GX4M4D3000C16 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

Crucial Technology BLS8G4D32AESBK.M8FE1 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMD16GX4M2B3733C17 8GB

Corsair CMD16GX4M2B3733C17 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Kingston HX424C15PB/4 4GB

Kingston HX424C15PB/4 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

G Skill Intl F4-2666C15-8GVR 8GB

G Skill Intl F4-2666C15-8GVR 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Corsair CMK8GX4M2B4000C19 4GB

Corsair CMK8GX4M2B4000C19 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB