Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CMG32GX4M2E3200C16 16GB

総合得点

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

総合得点

Corsair CMG32GX4M2E3200C16 16GB

Corsair CMG32GX4M2E3200C16 16GB

相違点仕様コメント

相違点

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

考慮すべき理由
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

バグを報告する

Corsair CMG32GX4M2E3200C16 16GB

考慮すべき理由
Corsair CMG32GX4M2E3200C16 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

29 35

周辺 -21% 低遅延
読み出し速度の高速化、GB/s

17.6 13.7

テスト平均値
書き込み速度の高速化、GB/s

13.2 9.6

テスト平均値
より高いメモリ帯域幅、mbps

17000 12800

周辺 1.33 高帯域

仕様

技術仕様の完全リスト

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMG32GX4M2E3200C16 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

35 29
読み出し速度、GB/s

13.7 17.6
書き込み速度、GB/秒

9.6 13.2
メモリ帯域幅、mbps

12800 17000

Other

商品説明

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
タイミング / クロック速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

2312 3412

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Apacer Technology 78.DAGP2.4030B 16GB

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G Skill Intl F4-3000C16-16GTRS 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HMAA4GS6MJR8N-VK 32GB

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Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

G Skill Intl F4-2133C15-8GRS 8GB

G Skill Intl F4-2133C15-8GRS 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB