RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Select RAM 1
Select RAM 2
Compare
DDR2 RAM list
All memory modules, sorted by increasing latency
№
Bandwidth
Latency, ns
Read speed, GB/s
Write speed, GB/s
№
2101
RAM
Swissbit MEN25664D2BC2EP-30 2GB
Latency
76
Read speed
3,210.0
Write speed
952.4
№
2102
RAM
Crucial Technology CT12864AC667.M8FM8 1GB
Latency
76
Read speed
2,325.8
Write speed
1,102.9
№
2103
RAM
takeMS International AG TMS2GB264D081805CH 2GB
Latency
76
Read speed
2,021.3
Write speed
1,327.1
№
2104
RAM
takeMS International AG TMS2GS264D081665AW 2GB
Latency
76
Read speed
1,934.1
Write speed
965.8
№
2105
RAM
Kingston KY9530-QAB 1GB
Latency
76
Read speed
3,140.7
Write speed
1,407.1
№
2106
RAM
SK Hynix 99P5471-013.A00LF 4GB
Latency
76
Read speed
4,650.2
Write speed
3,013.5
№
2107
RAM
Kreton Corporation 51523A151561452200 1GB
Latency
76
Read speed
2,085.4
Write speed
939.3
№
2108
RAM
Transcend Information TS128MLQ64V6J 1GB
Latency
76
Read speed
3,048.5
Write speed
1,261.6
№
2109
RAM
SK Hynix HYMP112S64CP6-Y5 1GB
Latency
76
Read speed
3,336.9
Write speed
1,482.6
№
2110
RAM
Mushkin 991504 1GB
Latency
76
Read speed
2,776.6
Write speed
1,188.5
№
2111
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8N3-Y5 1GB
Latency
76
Read speed
2,874.6
Write speed
1,945.1
№
2112
RAM
Ramaxel Technology RMN1150EG38D6F-667 512MB
Latency
76
Read speed
2,010.7
Write speed
1,137.8
№
2113
RAM
Ramaxel Technology RMN1150MJ48D7F-800 1GB
Latency
76
Read speed
3,648.3
Write speed
1,680.8
№
2114
RAM
ASint Technology B18J5S83DN 1GB
Latency
76
Read speed
2,240.4
Write speed
1,511.7
№
2115
RAM
Kreton Corporation 516245223681353200 2GB
Latency
76
Read speed
1,269.8
Write speed
1,187.0
№
2116
RAM
OCZ OCZ2VU8002G 2GB
Latency
76
Read speed
3,795.3
Write speed
2,234.2
№
2117
RAM
Kingston 9905272-027.A00LF 1GB
Latency
76
Read speed
1,917.8
Write speed
737.9
№
2118
RAM
Kingston 9905293-014.A00LF 1GB
Latency
76
Read speed
2,021.2
Write speed
867.1
№
2119
RAM
Nanya Technology M2N2G64TU8HD5B-3C 2GB
Latency
76
Read speed
2,994.4
Write speed
1,273.3
№
2120
RAM
Patriot Memory (PDP Systems) PSD21G6672 1GB
Latency
76
Read speed
3,233.6
Write speed
1,650.8
«
103
104
105
106
107
108
»
Latest comparisons
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Samsung M393B1K70CH0-CH9 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Crucial Technology CT2K102464BD160B 8GB
Essencore Limited KD48GS88C-32N2200 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston 9965640-006.A01G 32GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-4266C17-16GVKB 16GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BL8G30C15U4R.M8FE 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Kingston KHX2400C11D3/4GX 4GB
Golden Empire CL16-16-16 D4-3000 4GB
Kingston 99U5469-045.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Samsung M378B5273CH0-CH9 4GB
Corsair CMK8GX4M2B4000C19 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CM4B8G2J2666A15D 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Report a bug
×
Bug description
Source link