RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
选择RAM 1
选择RAM 2
比较
DDR2 RAM列表
所有内存模块,按延迟增加排序
№
带宽
延迟, ns
读取速度,GB/s
写入速度,GB/s
№
2101
RAM
Swissbit MEN25664D2BC2EP-30 2GB
Latency
76
Read speed
3,210.0
Write speed
952.4
№
2102
RAM
Crucial Technology CT12864AC667.M8FM8 1GB
Latency
76
Read speed
2,325.8
Write speed
1,102.9
№
2103
RAM
takeMS International AG TMS2GB264D081805CH 2GB
Latency
76
Read speed
2,021.3
Write speed
1,327.1
№
2104
RAM
takeMS International AG TMS2GS264D081665AW 2GB
Latency
76
Read speed
1,934.1
Write speed
965.8
№
2105
RAM
Kingston KY9530-QAB 1GB
Latency
76
Read speed
3,140.7
Write speed
1,407.1
№
2106
RAM
SK Hynix 99P5471-013.A00LF 4GB
Latency
76
Read speed
4,650.2
Write speed
3,013.5
№
2107
RAM
Kreton Corporation 51523A151561452200 1GB
Latency
76
Read speed
2,085.4
Write speed
939.3
№
2108
RAM
Transcend Information TS128MLQ64V6J 1GB
Latency
76
Read speed
3,048.5
Write speed
1,261.6
№
2109
RAM
SK Hynix HYMP112S64CP6-Y5 1GB
Latency
76
Read speed
3,336.9
Write speed
1,482.6
№
2110
RAM
Mushkin 991504 1GB
Latency
76
Read speed
2,776.6
Write speed
1,188.5
№
2111
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP512F72BP8N3-Y5 1GB
Latency
76
Read speed
2,874.6
Write speed
1,945.1
№
2112
RAM
Ramaxel Technology RMN1150EG38D6F-667 512MB
Latency
76
Read speed
2,010.7
Write speed
1,137.8
№
2113
RAM
Ramaxel Technology RMN1150MJ48D7F-800 1GB
Latency
76
Read speed
3,648.3
Write speed
1,680.8
№
2114
RAM
ASint Technology B18J5S83DN 1GB
Latency
76
Read speed
2,240.4
Write speed
1,511.7
№
2115
RAM
Kreton Corporation 516245223681353200 2GB
Latency
76
Read speed
1,269.8
Write speed
1,187.0
№
2116
RAM
OCZ OCZ2VU8002G 2GB
Latency
76
Read speed
3,795.3
Write speed
2,234.2
№
2117
RAM
Kingston 9905272-027.A00LF 1GB
Latency
76
Read speed
1,917.8
Write speed
737.9
№
2118
RAM
Kingston 9905293-014.A00LF 1GB
Latency
76
Read speed
2,021.2
Write speed
867.1
№
2119
RAM
Nanya Technology M2N2G64TU8HD5B-3C 2GB
Latency
76
Read speed
2,994.4
Write speed
1,273.3
№
2120
RAM
Patriot Memory (PDP Systems) PSD21G6672 1GB
Latency
76
Read speed
3,233.6
Write speed
1,650.8
«
103
104
105
106
107
108
»
最新比较
G Skill Intl F3-2133C9-4GAB 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Corsair CMZ16GX3M2A1866C9 8GB
Super Talent F3200UA8G 8GB
Samsung M4 70T2953EZ3-CE6 1GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
Kingston KHX1866C9D3/8GX 8GB
Netac Technology Co Ltd E40832A 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
JUHOR JHD3000U1908JG 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Kingston KHX3200C18D4/8G 8GB
Samsung M471A1A43CB1-CRC 8GB
Kingston 99U5474-037.A00LF 4GB
Corsair CM4X16GE2400C14K4 16GB
Kingston 99U5584-001.A00LF 4GB
Golden Empire CL16-16-16 D4-2800 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston KHX3200C16D4/16GX 16GB
AMD AE34G2139U2 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Kingston 9965525-018.A00LF 4GB
Corsair CMW128GX4M8C3000C16 16GB
G Skill Intl F3-2133C9-4GAB 4GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
报告一个错误
×
Bug description
Source link