Samsung M4 70T5663CZ3-CE6 2GB vs V-GEN D4S8GL32A8TS 8GB

Pontuação geral

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Pontuação geral

V-GEN D4S8GL32A8TS 8GB

V-GEN D4S8GL32A8TS 8GB

Diferenças Especificações Comentários

Diferenças

Samsung M4 70T5663CZ3-CE6 2GB

Razões a considerar
Samsung M4 70T5663CZ3-CE6 2GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

3 18.7

Valor médio nos testes

V-GEN D4S8GL32A8TS 8GB

Razões a considerar
V-GEN D4S8GL32A8TS 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

56 69

Por volta de -23% menor latência
Velocidade de escrita mais rápida, GB/s

8.9 1,441.2

Valor médio nos testes
Maior largura de banda de memória, mbps

19200 5300

Por volta de 3.62 maior largura de banda

Especificações

Lista completa de especificações técnicas

Samsung M4 70T5663CZ3-CE6 2GB

V-GEN D4S8GL32A8TS 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

69 56
Velocidade de leitura, GB/s

3,325.1 18.7
Velocidade de escrita, GB/s

1,441.2 8.9
Largura de banda de memória, mbps

5300 19200

Other

Descrição

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Tempos / Velocidade do relógio

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)

525 2235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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