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DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
2161
RAM
Ramaxel Technology RMN1740EF48D8F-800 2GB
Latency
78
Read speed
3,671.2
Write speed
2,373.1
№
2162
RAM
Kreton Corporation 516245223681351400 2GB
Latency
78
Read speed
3,010.6
Write speed
1,148.7
№
2163
RAM
Samsung M3 78T5QZ3-CF7 4GB
Latency
78
Read speed
4,485.6
Write speed
3,010.1
№
2164
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72CP4D3-Y5 2GB
Latency
78
Read speed
2,827.9
Write speed
2,037.4
№
2165
RAM
Kingston 9905295-019.A01LF 1GB
Latency
78
Read speed
2,439.6
Write speed
1,499.7
№
2166
RAM
Elpida EBE21UE8AFSB-8G-F 2GB
Latency
78
Read speed
3,501.3
Write speed
2,356.0
№
2167
RAM
Centon Electronics JIYT48UFA 1GB 1GB
Latency
78
Read speed
748.0
Write speed
501.7
№
2168
RAM
CompuStocx (CSX) CSX 2GB
Latency
78
Read speed
3,387.7
Write speed
1,940.1
№
2169
RAM
Patriot Memory (PDP Systems) PSD22G5332 2GB
Latency
79
Read speed
2,934.7
Write speed
1,283.1
№
2170
RAM
G Skill Intl F2-4200PHU1-1GBLA 1GB
Latency
79
Read speed
2,601.0
Write speed
2,102.6
№
2171
RAM
Hynix Semiconductor (Hyundai Electronics) ZION 667-2GB-M128- 2GB
Latency
79
Read speed
2,345.8
Write speed
1,115.0
№
2172
RAM
Kingston 9905316-068.A00LF 1GB
Latency
79
Read speed
1,963.7
Write speed
1,691.6
№
2173
RAM
Micron Technology 9HTF6472AY-667D4 512MB
Latency
79
Read speed
2,495.1
Write speed
1,404.3
№
2174
RAM
AENEON AET660UD00-370B98Z 512MB
Latency
79
Read speed
1,760.2
Write speed
1,037.3
№
2175
RAM
Kingmax Semiconductor KLCE88F-B8HS5 2GB
Latency
79
Read speed
2,909.1
Write speed
2,015.1
№
2176
RAM
Qimonda 64T64020EDL3SB2 512MB
Latency
79
Read speed
2,354.0
Write speed
1,201.0
№
2177
RAM
Qimonda 64T128020EDL2.5C2 1GB
Latency
79
Read speed
3,061.8
Write speed
1,468.1
№
2178
RAM
Micron Technology 16HTF25664HY-800J3 2GB
Latency
79
Read speed
2,004.5
Write speed
1,210.1
№
2179
RAM
Nanya Technology NT2GT72U8PD1BN-3C 1GB
Latency
79
Read speed
3,022.1
Write speed
2,154.7
№
2180
RAM
Micron Technology 16HTF51264AY-667A1 4GB
Latency
79
Read speed
3,881.0
Write speed
2,290.3
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Últimas comparações
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT16GX4M2C3000C15 8GB
Samsung DDR3 8GB 1600MHz 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-2666C15-4GRR 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Kingston 99U5713-001.A00G 4GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Apacer Technology 75.A73AA.G03 2GB
G Skill Intl F4-3200C16-8GVR 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KF2666C16D4/16G 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK32GX4M2Z3600C18 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMSX64GX4M2A2933C19 32GB
Kingston 99U5584-010.A00LF 4GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Kingston 9965525-140.A00LF 8GB
Samsung M391A1G43DB0-CPB 8GB
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