RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Comparar
DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
2201
RAM
Netlist N*D517A21207FD53I5 4GB
Latency
80
Read speed
2,547.4
Write speed
1,995.7
№
2202
RAM
Micron Technology 36HTF25672F667B3E3 2GB
Latency
80
Read speed
3,434.9
Write speed
2,183.8
№
2203
RAM
Transcend Information JM467Q643A-6 512MB
Latency
80
Read speed
1,965.2
Write speed
782.4
№
2204
RAM
Kingston 99U5293-009.A00LF 1GB
Latency
80
Read speed
1,871.6
Write speed
968.1
№
2205
RAM
Micron Technology L32 09/2010 ZMAX 2GB
Latency
80
Read speed
4,082.3
Write speed
2,930.5
№
2206
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP151P72CP4-S5 4GB
Latency
80
Read speed
3,661.8
Write speed
4,127.7
№
2207
RAM
Transcend Information TS128MQR72V4J 1GB
Latency
80
Read speed
1,631.6
Write speed
825.5
№
2208
RAM
ASint Technology VLZ2128M8-JGG 2GB
Latency
80
Read speed
3,775.8
Write speed
2,883.8
№
2209
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP532U64CP6-C4 256MB
Latency
80
Read speed
2,180.0
Write speed
1,343.8
№
2210
RAM
SK Hynix HYMP564S64CP6-C4 512MB
Latency
80
Read speed
1,853.0
Write speed
1,482.7
№
2211
RAM
SK Hynix HYMP564U64CP8-C4 512MB
Latency
80
Read speed
1,981.7
Write speed
1,480.8
№
2212
RAM
Patriot Memory (PDP Systems) PSA22G800ICDS 2GB
Latency
80
Read speed
2,223.5
Write speed
1,414.8
№
2213
RAM
Smart Modular SG564288FG8N6JFMFR 1GB
Latency
80
Read speed
5,491.8
Write speed
3,450.1
№
2214
RAM
Nanya Technology M2Y51264TU88A2B-3C 512MB
Latency
81
Read speed
1,885.7
Write speed
874.3
№
2215
RAM
Kingmax Semiconductor KLBC28F-A8KB4 512MB
Latency
81
Read speed
2,019.5
Write speed
998.4
№
2216
RAM
Kingston ACR128X64D2S800C6 1GB
Latency
81
Read speed
1,736.0
Write speed
1,027.3
№
2217
RAM
takeMS International AG TMS1GB264C082805CN 1GB
Latency
81
Read speed
3,176.2
Write speed
1,537.5
№
2218
RAM
Qimonda 64T256022EDL3SB 2GB
Latency
81
Read speed
2,677.0
Write speed
1,361.0
№
2219
RAM
Qimonda 72T128000EP3SB2 1GB
Latency
81
Read speed
4,200.9
Write speed
3,044.0
№
2220
RAM
Crucial Technology CT25664AC800.C16FH 2GB
Latency
81
Read speed
3,416.9
Write speed
1,470.1
«
108
109
110
111
112
113
»
Últimas comparações
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT32G4DFD8266.M16FB 32GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMW8GX4M1Z3600C18 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2666C16D4/16GX 16GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905625-097.A00G 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C19-16GSXW 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M386A4G40DM0-CPB 32GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Samsung M393B1G70QH0-YK0 8GB
A-DATA Technology AX4S2800316G18-B 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M378A1K43BB1-CPB 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3000C16-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTRG 8GB
Relatar um erro
×
Bug description
Source link