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DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
2441
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP112F
Latency
102
Read speed
2,937.8
Write speed
1,921.8
№
2442
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125F72CP8D3-S5 1GB
Latency
102
Read speed
3,114.3
Write speed
2,330.9
№
2443
RAM
SK Hynix HYMP112F72CP8D3-Y5 1GB
Latency
102
Read speed
3,317.8
Write speed
1,834.2
№
2444
RAM
SK Hynix HYMP112P72CP8-Y5 1GB
Latency
102
Read speed
3,153.8
Write speed
2,342.0
№
2445
RAM
ASint Technology B2YJ2SG4FNK 2GB
Latency
102
Read speed
1,805.4
Write speed
561.5
№
2446
RAM
SK Hynix HYMP564S64CP6-Y5 512MB
Latency
102
Read speed
2,248.9
Write speed
1,357.6
№
2447
RAM
Micron Technology 9HTF6472FY-667B4D3 512MB
Latency
103
Read speed
3,135.3
Write speed
1,572.0
№
2448
RAM
AMD JM388Q643A-6 1GB
Latency
103
Read speed
1,795.2
Write speed
1,219.1
№
2449
RAM
SK Hynix HYMP525B72BP4N2-C4 2GB
Latency
103
Read speed
2,146.6
Write speed
1,221.0
№
2450
RAM
Centon Electronics JIYS38UFA 1GB 1GB
Latency
103
Read speed
1,918.1
Write speed
1,015.4
№
2451
RAM
Samsung M3 93T5750GZA-CE6 2GB
Latency
104
Read speed
2,791.4
Write speed
2,637.1
№
2452
RAM
Nanya Technology NT1GT72U8PB1BN-3C 1GB
Latency
104
Read speed
3,246.1
Write speed
1,975.5
№
2453
RAM
Samsung M395T2863QZ4-CF76 1GB
Latency
104
Read speed
3,192.0
Write speed
2,404.5
№
2454
RAM
Qimonda 72T512920EFA3SC 2GB
Latency
104
Read speed
2,640.7
Write speed
1,940.1
№
2455
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564F
Latency
104
Read speed
3,169.7
Write speed
1,899.5
№
2456
RAM
Samsung M395T5160QZ4-CF76 2GB
Latency
105
Read speed
3,213.7
Write speed
2,438.6
№
2457
RAM
Samsung M395T5663QZ4-CE66 1GB
Latency
105
Read speed
2,861.2
Write speed
2,016.2
№
2458
RAM
Samsung M395T5750CZ4-CE61 2GB
Latency
105
Read speed
2,945.3
Write speed
1,993.8
№
2459
RAM
Qimonda 72T256420HLD2.5C 2GB
Latency
105
Read speed
3,266.4
Write speed
2,533.8
№
2460
RAM
Samsung M3 93T5160QZA-CE6 4GB
Latency
106
Read speed
2,908.1
Write speed
2,482.0
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Últimas comparações
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
Kingston 9905403-134.A00LF 2GB
Corsair CMK8GX4M1A2666C16 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2933C14-16GFX 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3200C16-4GTZB 4GB
Kingston 9905471-002.A00LF 2GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
A-DATA Technology AO1E34RCSV1-BF1S 16GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Kingston 9905403-444.A00LF 4GB
Neo Forza NMUD480E86-3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KHYXPX-HYJ 8GB
PNY Electronics PNY 2GB
Kingston 9905624-010.A00G 4GB
Kingston HP669238-071-HYC 4GB
Apacer Technology D12.2755BS.001 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston KHX2933C17D4/8G 8GB
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