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DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
601
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP532U
Latency
51
Read speed
2,901.9
Write speed
1,493.1
№
602
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP532U64P6-E3 256MB
Latency
51
Read speed
3,614.7
Write speed
1,687.0
№
603
RAM
Mushkin 996640 2GB
Latency
51
Read speed
4,648.3
Write speed
1,878.2
№
604
RAM
Wilk Elektronik S.A. GR800D264L5/2G 2GB
Latency
51
Read speed
4,830.1
Write speed
2,247.3
№
605
RAM
Samsung M3 78T5663EH3-CE6 2GB
Latency
51
Read speed
3,930.6
Write speed
1,829.2
№
606
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64BP8-Y5 512MB
Latency
51
Read speed
3,806.0
Write speed
1,715.9
№
607
RAM
Kingston 9905295-056.A00LF 2GB
Latency
51
Read speed
4,414.1
Write speed
1,810.5
№
608
RAM
Elpida EBE51RD8AEFA-4A-E 512MB
Latency
51
Read speed
3,535.9
Write speed
1,487.9
№
609
RAM
CompuStocx (CSX) Compustocx (CSX) 4GB
Latency
51
Read speed
7,189.5
Write speed
4,357.4
№
610
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U72CP8-Y5 512MB
Latency
51
Read speed
4,131.7
Write speed
1,646.8
№
611
RAM
Nanya Technology M2Y1G64TU8HB4B-25C 1GB
Latency
51
Read speed
4,694.4
Write speed
1,948.3
№
612
RAM
Nanya Technology M2Y1G64TU8HB5B-25C 1GB
Latency
52
Read speed
4,662.4
Write speed
2,387.1
№
613
RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
Latency
52
Read speed
4,226.4
Write speed
1,479.2
№
614
RAM
Samsung M3 78T6553CZ3-CCC 512MB
Latency
52
Read speed
3,361.8
Write speed
1,516.6
№
615
RAM
A-DATA Technology DQKD1A08 1GB
Latency
52
Read speed
2,614.5
Write speed
1,145.9
№
616
RAM
Micron Technology 8HTF12864AZ-667H1 1GB
Latency
52
Read speed
3,709.9
Write speed
1,877.1
№
617
RAM
Samsung M3 78T6553EZ3-CD5 512MB
Latency
52
Read speed
3,641.0
Write speed
1,446.3
№
618
RAM
Corsair CM2X1024-6400C5DHX 1GB
Latency
52
Read speed
4,609.7
Write speed
2,051.8
№
619
RAM
G Skill Intl F2-6400CL4-1GBPK 1GB
Latency
52
Read speed
4,922.6
Write speed
2,290.3
№
620
RAM
Peak Electronics 128X64K-80E 1GB
Latency
52
Read speed
4,465.6
Write speed
2,104.6
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Últimas comparações
Samsung M471B5273CH0-CH9 4GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CM4X16GC3000C15K4 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905701-010.A00G 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston KF2666C15S4/8G 8GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMWX8GD3200C16W2E 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA451U7MFR8N-TF 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-2800C18-16GRS 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Kingston 99U5584-004.A00LF 4GB
Kingston MSI24D4U7S8MH-8 8GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology CT8G4DFD824A.C16FDR2 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9905702-137.A00G 8GB
Unifosa Corporation HU564404EP0200 4GB
Super Talent F21UB8GS 8GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
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