RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Comparar
DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
1381
RAM
Smart Modular SG564568FG8NWKF-Z1 2GB
Latency
61
Read speed
4,619.4
Write speed
1,917.4
№
1382
RAM
Kingston 9905316-092.A00LF 1GB
Latency
61
Read speed
3,867.5
Write speed
1,868.8
№
1383
RAM
Nanya Technology M2Y2G64TU8HD5B-AC 2GB
Latency
61
Read speed
4,614.7
Write speed
2,366.2
№
1384
RAM
Strontium EVMP2G800U86S 2GB
Latency
61
Read speed
2,937.7
Write speed
2,035.6
№
1385
RAM
G Skill Intl F2-6400PHU1-1GBHZ 1GB
Latency
61
Read speed
3,422.5
Write speed
1,568.2
№
1386
RAM
Corsair VS4GSDS800D2 4GB
Latency
61
Read speed
4,370.3
Write speed
1,756.1
№
1387
RAM
Micron Technology 16HTF12864AY-53ED4 1GB
Latency
61
Read speed
3,064.3
Write speed
1,415.3
№
1388
RAM
ProMos/Mosel Vitelic V916764B24QAFW-E4 512MB
Latency
61
Read speed
2,314.0
Write speed
1,119.9
№
1389
RAM
Micron Technology 16HTF12864AY-667G1 1GB
Latency
61
Read speed
2,717.7
Write speed
1,715.4
№
1390
RAM
Crucial Technology BL12864AL80A.8FH5 1GB
Latency
61
Read speed
3,528.3
Write speed
3,310.7
№
1391
RAM
Kingmax Semiconductor KLBD48K-A8HD4-HCES 1GB
Latency
61
Read speed
2,973.3
Write speed
810.1
№
1392
RAM
Samsung M4 70T2953BY0-CD5 1GB
Latency
61
Read speed
1,832.7
Write speed
737.3
№
1393
RAM
Micron Technology 16HTF25664AY-800E1 2GB
Latency
61
Read speed
4,369.2
Write speed
2,225.6
№
1394
RAM
Nanya Technology NT2GT64U8HB0JY-3C 2GB
Latency
61
Read speed
4,158.5
Write speed
1,906.4
№
1395
RAM
Kingston ACR256X64D2U800C6L 2GB
Latency
61
Read speed
4,233.2
Write speed
2,173.5
№
1396
RAM
Nanya Technology NT2GT64U8HD0BN-3C 2GB
Latency
61
Read speed
4,521.7
Write speed
1,864.6
№
1397
RAM
Micron Technology 16HTF25664HY-53EE1 2GB
Latency
61
Read speed
3,358.3
Write speed
1,452.8
№
1398
RAM
Samsung M4 70T5663RZ3-CF7 2GB
Latency
61
Read speed
4,668.9
Write speed
1,903.1
№
1399
RAM
AENEON AET860UD00-25DC07X 2GB
Latency
61
Read speed
4,050.8
Write speed
2,071.7
№
1400
RAM
Qimonda 64T128020EU2.5B2 1GB
Latency
61
Read speed
4,590.5
Write speed
1,922.1
«
67
68
69
70
71
72
»
Últimas comparações
Kingston 9905471-071.A00LF 8GB
Corsair CM4X8GD3200C16K2E 8GB
Kingston 99U5474-010.A00LF 2GB
Apacer Technology D12.2356WS.001 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C19-16GSXW 16GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C22-8GRS 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU7AFR8C
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CM4X16GE2666C18S4 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX2133C14D4/4G 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CM4X4GF2666C16K4 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 9ASF51272PZ-2G1A2 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905599-010.A00G 4GB
Kingston ACR16D3LS1KNG/8G 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3000
Samsung M4 70T2953EZ3-CE6 1GB
Golden Empire CL17-17-17 D4-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation W4N2666PS-16G 16GB
Relatar um erro
×
Bug description
Source link
Русский 
English 
Español 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
