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DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
1621
RAM
Elpida EBE11UD8AGWA-6E-E 1GB
Latency
64
Read speed
3,405.1
Write speed
1,548.9
№
1622
RAM
Legacy Electronics 24FN67ENME000EN 4GB
Latency
64
Read speed
2,938.7
Write speed
2,213.9
№
1623
RAM
MDT Technologies GmbH MDT 512M DDR2-53 512MB
Latency
64
Read speed
2,762.4
Write speed
1,348.9
№
1624
RAM
Patriot Memory (PDP Systems) PDC21G6400LLK 512MB
Latency
64
Read speed
2,330.8
Write speed
1,457.0
№
1625
RAM
A-DATA Technology ADOVF1A083F2G 1GB
Latency
64
Read speed
3,383.0
Write speed
1,895.0
№
1626
RAM
Smart Modular SG5SD42N2G1BDDEQ1H 2GB
Latency
64
Read speed
3,152.7
Write speed
2,444.3
№
1627
RAM
Nanya Technology M2N2G64TU8HG5B-AC 2GB
Latency
64
Read speed
3,272.5
Write speed
1,580.9
№
1628
RAM
Micron Technology 8HTF6464HDY-667D3 512MB
Latency
64
Read speed
3,134.4
Write speed
1,768.6
№
1629
RAM
Elpida EBE52UD6ABSA-4A-E 512MB
Latency
64
Read speed
1,702.7
Write speed
657.3
№
1630
RAM
A-DATA Technology DOPE1B163B9 2GB
Latency
64
Read speed
2,565.8
Write speed
1,441.2
№
1631
RAM
Kingston 9905315-106.A00LF 1GB
Latency
65
Read speed
3,237.3
Write speed
1,763.4
№
1632
RAM
G Skill Intl F2-4200PHU1-1GBSA 1GB
Latency
65
Read speed
2,273.6
Write speed
1,138.9
№
1633
RAM
Samsung M3 78T6553BZ3-CD5 512MB
Latency
65
Read speed
2,962.9
Write speed
1,190.6
№
1634
RAM
Micron Technology 8HTF12864HDY-667E1 1GB
Latency
65
Read speed
3,738.5
Write speed
1,590.1
№
1635
RAM
Samsung M3 78T6553EZS-CE6 512MB
Latency
65
Read speed
3,174.5
Write speed
1,465.3
№
1636
RAM
Infineon (Siemens) 64T64020HDL5A 512MB
Latency
65
Read speed
1,741.9
Write speed
713.5
№
1637
RAM
Patriot Memory (PDP Systems) PVS24G8500ELK 2GB
Latency
65
Read speed
4,597.2
Write speed
2,516.3
№
1638
RAM
Nanya Technology M2Y2G64TU8HC4B-3C 2GB
Latency
65
Read speed
3,912.3
Write speed
2,007.6
№
1639
RAM
A-DATA Technology HYOVF1B163BZ 2GB
Latency
65
Read speed
3,238.5
Write speed
1,534.4
№
1640
RAM
Kingston 9905316-132.A01LF 2GB
Latency
65
Read speed
5,168.1
Write speed
3,224.4
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Últimas comparações
Corsair CMY16GX3M4A2133C8 4GB
G Skill Intl F4-2133C15-8GVK 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston 99U5700-010.A00G 8GB
Samsung M471B1G73BH0-YK0 8GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston KMKYF9-HYA 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965589-005.A01G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair MK16GX44A2666C16 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C17-4GVK 4GB
Samsung M471B1G73QH0-YK0 8GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston KHX3200C18D4/8G 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston M378A1K43CB2-CRC 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
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