RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Comparar
DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
1761
RAM
Micro Memory Bank 2GB
Latency
66
Read speed
3,231.4
Write speed
2,465.8
№
1762
RAM
Nanya Technology M1S51264TUH8A0F-37 512MB
Latency
66
Read speed
1,965.6
Write speed
660.1
№
1763
RAM
Nanya Technology M2N1G64TU8HB0B-3C 1GB
Latency
66
Read speed
3,170.8
Write speed
1,028.0
№
1764
RAM
Xerox MALABS 1GB
Latency
66
Read speed
3,199.3
Write speed
1,465.8
№
1765
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
Latency
66
Read speed
4,360.5
Write speed
2,935.8
№
1766
RAM
Patriot Memory (PDP Systems) PSD21G800816 1GB
Latency
66
Read speed
3,853.2
Write speed
1,637.0
№
1767
RAM
G Skill Intl F2-5300CL5-2GBSA 2GB
Latency
67
Read speed
3,174.7
Write speed
1,241.9
№
1768
RAM
Micron Technology 8HTF12864AZ-800H1 1GB
Latency
67
Read speed
3,362.7
Write speed
1,677.5
№
1769
RAM
Nanya Technology M2Y2G64TU8HC0B-3C 2GB
Latency
67
Read speed
2,969.6
Write speed
1,532.8
№
1770
RAM
Smart Modular SG564568XIA535Z2SE 2GB
Latency
67
Read speed
3,541.7
Write speed
1,487.9
№
1771
RAM
Smart Modular SG564643FG8NZIL-Z4 512MB
Latency
67
Read speed
1,196.6
Write speed
1,010.8
№
1772
RAM
A-DATA Technology HYOVF1A083FZZ 1GB
Latency
67
Read speed
1,323.7
Write speed
1,188.5
№
1773
RAM
G Skill Intl F2-6400CL5-2GBPI 2GB
Latency
67
Read speed
4,326.3
Write speed
2,449.8
№
1774
RAM
A-DATA Technology HYOVF1B163GZ 2GB
Latency
67
Read speed
3,671.1
Write speed
1,550.1
№
1775
RAM
A-DATA Technology HYOVF1B163GZM 2GB
Latency
67
Read speed
4,567.3
Write speed
2,104.4
№
1776
RAM
A-DATA Technology HYQPE1B16 2GB
Latency
67
Read speed
3,413.2
Write speed
1,056.1
№
1777
RAM
Micron Technology 16HTF12864AY-53EB1 1GB
Latency
67
Read speed
2,767.8
Write speed
1,414.3
№
1778
RAM
Micron Technology 16HTF12864AY-53EF1 1GB
Latency
67
Read speed
2,735.0
Write speed
1,233.1
№
1779
RAM
Intel 99P5471-013.A00LF 4GB
Latency
67
Read speed
5,284.9
Write speed
3,554.4
№
1780
RAM
Nanya Technology NT1GT64U8HB0BN-3C 1GB
Latency
67
Read speed
3,206.2
Write speed
1,338.6
«
86
87
88
89
90
91
»
Últimas comparações
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-4000C18-16GVK 16GB
Samsung 1600 CL10 Series 8GB
Kingston 9905734-022.A00G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston HP37D4U1S8ME-16XR 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-4200C19-4GTZ 4GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Kingston 9965643-002.A01G 4GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Samsung M471A2K43DB1-CWE 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 9905622-058.A00G 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Kingston K821PJ-MID 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston XK2M26-MIE-NX 16GB
Samsung M471A5143SB1-CRC 4GB
A-DATA Technology AX4S2800316G18-B 16GB
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology 78.B1GN3.4032B 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-3200C16-8GTZKY 8GB
Relatar um erro
×
Bug description
Source link
Русский 
English 
Español 
Deutsch 
Français 
Italiano 
Polski 
中文 
日本語 
