A-DATA Technology AD73I1B1672EG 2GB vs Hyundai Inc AR36C18S8K2HU416R 8GB

总分

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分

Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

差异规格评论

差异

A-DATA Technology AD73I1B1672EG 2GB

需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB

报告一个错误

Hyundai Inc AR36C18S8K2HU416R 8GB

需要考虑的原因
Hyundai Inc AR36C18S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 26

左右 -37% 更低的延时
更快的读取速度，GB/s

20 12.2

测试中的平均数值
更快的写入速度，GB/s

17.5 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1B1672EG 2GB

Hyundai Inc AR36C18S8K2HU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 19
读取速度，GB/s

12.2 20.0
写入速度，GB/s

8.5 17.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1677 3499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR16GX4M2C3000C16 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston KHX16 4GB

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Samsung M4 70T5663CZ3-CE6 2GB

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AMD R7S48G2400U2S 8GB

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Kingston 9965525-140.A00LF 8GB

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Micron Technology 72ASS4G72LZ-2G3A2 32GB

Micron Technology 72ASS4G72LZ-2G3A2 32GB

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SK Hynix HMA451S6AFR8N-TF 4GB

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Kingston ACR21D4S15HAG/8G 8GB