A-DATA Technology AD73I1B1672EG 2GB vs Kingston 9905668-002.A00G 8GB

总分

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

总分

Kingston 9905668-002.A00G 8GB

Kingston 9905668-002.A00G 8GB

差异规格评论

差异

A-DATA Technology AD73I1B1672EG 2GB

需要考虑的原因
A-DATA Technology AD73I1B1672EG 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 33% 更低的延时

Kingston 9905668-002.A00G 8GB

需要考虑的原因
Kingston 9905668-002.A00G 8GB

报告一个错误

更快的读取速度，GB/s

13.3 12.2

测试中的平均数值
更快的写入速度，GB/s

10.2 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1B1672EG 2GB

Kingston 9905668-002.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 39
读取速度，GB/s

12.2 13.3
写入速度，GB/s

8.5 10.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1677 2279

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5471-025.A00LF 4GB

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G Skill Intl F4-2133C15-4GIS 4GB

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Nanya Technology M2F4G64CB8HG5N-CG 4GB

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Panram International Corporation W4N2400PS-8G 8GB

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Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-3200C16-32GTZR 32GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Samsung M395T2863QZ4-CF76 1GB

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Micron Technology 18ASF1G72PZ-2G1A2 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

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G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Corsair CMW16GX4M2K4266C19 8GB

Corsair CMW16GX4M2K4266C19 8GB