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A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3600C19-16GVRB 16GB
比较
A-DATA Technology ADOVE1A0834E 1GB vs G Skill Intl F4-3600C19-16GVRB 16GB
总分
A-DATA Technology ADOVE1A0834E 1GB
总分
G Skill Intl F4-3600C19-16GVRB 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3600C19-16GVRB 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
94
左右 -236% 更低的延时
更快的读取速度,GB/s
18.9
1
测试中的平均数值
更快的写入速度,GB/s
16.2
1,165.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3600C19-16GVRB 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
94
28
读取速度,GB/s
1,882.0
18.9
写入速度,GB/s
1,165.4
16.2
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
305
3835
A-DATA Technology ADOVE1A0834E 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB
G Skill Intl F4-3600C19-16GVRB 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3600C19-16GVRB 16GB
Samsung M471B1G73EB0-YK0 8GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMV8GX4M1A2133C15 8GB
Crucial Technology CT51264BD160B.C16F 4GB
V-Color Technology Inc. TA48G30S815GK 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CM4X16GE2133C13K8 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology 78.A2GC9.AF0 2GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C14-16GTZRA 16GB
报告一个错误
×
Bug description
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