RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology ADOVE1A0834E 1GB
Smart Modular SMS4WEC8C2K0446FCG 16GB

A-DATA Technology ADOVE1A0834E 1GB vs Smart Modular SMS4WEC8C2K0446FCG 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Smart Modular SMS4WEC8C2K0446FCG 16GB 需要考虑的原因
Smart Modular SMS4WEC8C2K0446FCG 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 94
    左右 -169% 更低的延时
  • 更快的读取速度，GB/s
    14.1 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 35
  • 读取速度，GB/s
    1,882.0 left arrow 14.1
  • 写入速度，GB/s
    1,165.4 left arrow 9.0
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2583

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Smart Modular SMS4WEC8C2K0446FCG 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
INTENSO 4GB
INTENSO 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4000C16-16GTRSA 16GB
G Skill Intl F4-4000C16-16GTRSA 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
内存RAM
Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
A-DATA Technology DDR4 4133 8GB
A-DATA Technology DDR4 4133 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston XF875V-HYA 8GB
Kingston XF875V-HYA 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Transcend Information TS2GSH64V1B 16GB
Transcend Information TS2GSH64V1B 16GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM