RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
比较
A-DATA Technology AM2L16BC4R1-B0CS 4GB vs Micron Technology 36ADS2G72PZ-2G1A1 16GB
总分
A-DATA Technology AM2L16BC4R1-B0CS 4GB
总分
Micron Technology 36ADS2G72PZ-2G1A1 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
94
左右 72% 更低的延时
更快的读取速度,GB/s
9.8
5.6
测试中的平均数值
需要考虑的原因
Micron Technology 36ADS2G72PZ-2G1A1 16GB
报告一个错误
更快的写入速度,GB/s
4.9
4.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
94
读取速度,GB/s
9.8
5.6
写入速度,GB/s
4.6
4.9
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1560
1334
A-DATA Technology AM2L16BC4R1-B0CS 4GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMU32GX4M4C3200C16 8GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KVR16N11/8-SP 8GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston XWM8G1-MIE 32GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4000C19-16GTZKK 16GB
A-DATA Technology AD73I1C1674EV 4GB
ISD Technology Limited KD48GU880-32A160X 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT8G4DFS824A.M8FR 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Samsung SF4721G4CKHH6DFSDS 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Micron Technology 36ADS2G72PZ-2G1A1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4133C19-8GTZKKF 8GB
Kingston 9965433-034.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Kingston 99U5471-056.A00LF 8GB
Kingston 9965600-005.A00G 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
NSITEXE Inc Visenta 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3600C17-16GTZR 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
报告一个错误
×
Bug description
Source link