A-DATA Technology AM2L16BC4R1-B0CS 4GB vs SK Hynix HMA81GS6MFR8N-UH 8GB

总分

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分

SK Hynix HMA81GS6MFR8N-UH 8GB

SK Hynix HMA81GS6MFR8N-UH 8GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 40

左右 35% 更低的延时

SK Hynix HMA81GS6MFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GS6MFR8N-UH 8GB

报告一个错误

更快的读取速度，GB/s

13.8 9.8

测试中的平均数值
更快的写入速度，GB/s

10.3 4.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0CS 4GB

SK Hynix HMA81GS6MFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 40
读取速度，GB/s

9.8 13.8
写入速度，GB/s

4.6 10.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1560 2340

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Tanbassh 8G 2666MHZ 8GB

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F4-2800C14-16GVK 16GB

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Corsair CMK8GX4M1D3000C16 8GB

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Samsung M378B5773CH0-CH9 2GB

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AMD R5316G1609U2K 8GB

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Samsung M378B5673EH1-CF8 2GB

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Kingston 9905678-156.A00G 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Kingston 9905663-016.A00G 16GB

Kingston 9905663-016.A00G 16GB

G Skill Intl F3-2400C10-8GTX 8GB

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Corsair CMD32GX4M4C3200C14M 8GB

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