A-DATA Technology DOVF1B163G2G 2GB vs Gloway International (HK) STK4U2400D15082C 8GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 80

左右 30% 更低的延时
更快的读取速度，GB/s

4 14.7

测试中的平均数值

Gloway International (HK) STK4U2400D15082C 8GB

需要考虑的原因
Gloway International (HK) STK4U2400D15082C 8GB

报告一个错误

更快的写入速度，GB/s

8.1 1,925.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Gloway International (HK) STK4U2400D15082C 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 80
读取速度，GB/s

4,315.2 14.7
写入速度，GB/s

1,925.7 8.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

658 1775

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Samsung M378T5663DZ3-CF7 2GB

Samsung M378T5663DZ3-CF7 2GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CM4X8GE2400C14K4 8GB

Corsair CM4X8GE2400C14K4 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Corsair CM4X4GD3000C15K4 4GB

Corsair CM4X4GD3000C15K4 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

DSL Memory D4SS12081SH21A-A 4GB

DSL Memory D4SS12081SH21A-A 4GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

G Skill Intl F4-3200C16-8GTRS 8GB

G Skill Intl F4-3200C16-8GTRS 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Avant Technology W641GU42J7240NC 8GB

Avant Technology W641GU42J7240NC 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2400C15-16GFT 16GB

G Skill Intl F4-2400C15-16GFT 16GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB