A-DATA Technology DQVE1908 512MB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

A-DATA Technology DQVE1908 512MB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 18.1

测试中的平均数值

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 66

左右 -136% 更低的延时
更快的写入速度，GB/s

14.8 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 28
读取速度，GB/s

2,775.5 18.1
写入速度，GB/s

1,557.9 14.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-16GVKA 16GB

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EVGA 16G-D4-2666-MR 4GB

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G Skill Intl F4-2400C15-4GRK 4GB

G Skill Intl F4-2400C15-4GRK 4GB

Kingston 99U5428-063.A00LF 8GB

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Crucial Technology BLS8G4D240FSA.16FBD 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB