A-DATA Technology DQVE1908 512MB vs Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 17.8

测试中的平均数值

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 66

左右 -128% 更低的延时
更快的写入速度，GB/s

14.1 1,557.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 29
读取速度，GB/s

2,775.5 17.8
写入速度，GB/s

1,557.9 14.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

382 3434

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5429-014.A00LF 4GB

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Kingston 9905598-009.A00G 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Apacer Technology D12.2344DT.001 4GB

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Team Group Inc. Team-Value-800 2GB

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G Skill Intl F4-2400C17-8GFT 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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G Skill Intl F4-2666C15-8GRR 8GB

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Kingston 9965525-018.A00LF 4GB

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Mushkin 991586 2GB

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G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB

SK Hynix HYMP112U64CP8-S5 1GB

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Team Group Inc. TEAMGROUP-lnd-2133 8GB

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Corsair CMU32GX4M2D3200C16 16GB

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Kingston SNY1600S11-4G-EDEG 4GB

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Kingston 9905701-141.A00G 16GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Kingston XRGM6C-MIB 16GB

Kingston XRGM6C-MIB 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3600C14-16GTZN 16GB

G Skill Intl F4-3600C14-16GTZN 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

INTENSO 5641152 4GB

INTENSO 5641152 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston ACR32D4S2S1ME-8 8GB

Kingston ACR32D4S2S1ME-8 8GB