A-DATA Technology VDQVE1B16 2GB vs Kingston 99U5734-014.A00G 16GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Kingston 99U5734-014.A00G 16GB

Kingston 99U5734-014.A00G 16GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 15.4

测试中的平均数值
更快的写入速度，GB/s

2,061.2 10.8

测试中的平均数值

Kingston 99U5734-014.A00G 16GB

需要考虑的原因
Kingston 99U5734-014.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 46

左右 -12% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Kingston 99U5734-014.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 41
读取速度，GB/s

4,937.3 15.4
写入速度，GB/s

2,061.2 10.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

759 2993

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-12800CL7-4GBXM 4GB

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Corsair CMSX16GX4M1A2400C16 16GB

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Corsair CMN16GX4M2Z3200C16 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair CMK16GX4M2A2400C16 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB