AMD AE34G1601U1 4GB vs AMD R534G1601U1S-UO 4GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

AMD R534G1601U1S-UO 4GB

需要考虑的原因
AMD R534G1601U1S-UO 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 67

左右 -148% 更低的延时
更快的读取速度，GB/s

14.7 6.8

测试中的平均数值
更快的写入速度，GB/s

9.2 3.6

测试中的平均数值

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

AMD R534G1601U1S-UO 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

67 27
读取速度，GB/s

6.8 14.7
写入速度，GB/s

3.6 9.2
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

998 2272

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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Essencore Limited KD4AGU88C-26N1900 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Super Talent STT-WB160CL0901 2GB

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G Skill Intl F4-3200C14-16GTZSK 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

SK Hynix HMA82GU6AFR8N-TF 16GB

SK Hynix HMA82GU6AFR8N-TF 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMK16GX4M2K4133C19 8GB

Corsair CMK16GX4M2K4133C19 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

V-GEN D4M8GL26A8TS6 8GB

V-GEN D4M8GL26A8TS6 8GB