AMD AE34G1601U1 4GB vs Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 67

左右 -148% 更低的延时
更快的读取速度，GB/s

17.8 6.8

测试中的平均数值
更快的写入速度，GB/s

14.5 3.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 27
读取速度，GB/s

6.8 17.8
写入速度，GB/s

3.6 14.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

998 3386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung DDR3 8GB 1600MHz 8GB

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Kingston 9905403-156.A00LF 2GB

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Kingston 9965516-430.A00G 16GB

G Skill Intl F4-2666C16-8GRB 8GB

G Skill Intl F4-2666C16-8GRB 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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SK Hynix HMA82GS6MFR8N-TF 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB

SK Hynix HMA41GS6AFR8N-TF 8GB