AMD AE34G1601U1 4GB vs ISD Technology Limited IM44GU48A30-GIIHM 4GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

ISD Technology Limited IM44GU48A30-GIIHM 4GB

需要考虑的原因
ISD Technology Limited IM44GU48A30-GIIHM 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 67

左右 -191% 更低的延时
更快的读取速度，GB/s

14.9 6.8

测试中的平均数值
更快的写入速度，GB/s

9.3 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 23
读取速度，GB/s

6.8 14.9
写入速度，GB/s

3.6 9.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

998 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP512U64CP8-Y5 1GB

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Corsair CMU32GX4M2A2400C14 16GB

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Crucial Technology CT25664BA1339.M8FK 2GB

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V-GEN D4H4GL26A8TS5 4GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston CBD26D4U9S8ME-8 8GB

Kingston CBD26D4U9S8ME-8 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Patriot Memory (PDP Systems) 4133 C19 Series 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

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Kingston 9905471-001.A01LF 2GB

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Gold Key Technology Co Ltd NMUD416F82-3200D 16GB