AMD AE34G1601U1 4GB vs Mushkin MR[ABC]4U360JNNM8G 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Mushkin MR[ABC]4U360JNNM8G 8GB

Mushkin MR[ABC]4U360JNNM8G 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Mushkin MR[ABC]4U360JNNM8G 8GB

需要考虑的原因
Mushkin MR[ABC]4U360JNNM8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 67

左右 -139% 更低的延时
更快的读取速度，GB/s

19.8 6.8

测试中的平均数值
更快的写入速度，GB/s

14.5 3.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Mushkin MR[ABC]4U360JNNM8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 28
读取速度，GB/s

6.8 19.8
写入速度，GB/s

3.6 14.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

998 3650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD8GX3M2A2800C12 4GB

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Kingston 9905469-143.A00LF 4GB

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G Skill Intl F4-2133C15-8GRS 8GB

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Samsung M3 91T2953GZ3-CF7 1GB

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Apacer Technology 78.C1GS7.DFW0C 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Corsair CMW64GX4M8Z2933C16 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Transcend Information JM3200HLG-8G 8GB

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Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Corsair CMU16GX4M2C3200C16 8GB

Corsair CMU16GX4M2C3200C16 8GB